RADIATION-EMITTING OPTOELECTRONIC COMPONENT

摘要

A radiation-emitting optoelectronic component is specified, comprising: – a semiconductor chip which emits primary radiation on operation of the component, – a conversion element comprising a conversion material which comprises Cr ions and/or Ni ions and a host material and which converts the primary radiation emitted by the semiconductor chip on operation of the component to a secondary radiation of wavelength between 700 nm and 2000 mm, wherein the host material is selected from a group of compounds comprising EAGa12O19, AyGa5O(15+y)/2, AE3Ga2Ge4O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5,5D0,5O14 and Mg4D2O9, where EA = Mg, Ca, Sr and/or Ba, A = Li, Na, K and/or Rb, AE = Mg, Ca, Sr and/or Ba, Ln = La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D = Nb and/or Ta and y = 0.9-1.9.