Fabrication of a capacitor with metal electrodes

摘要

The fabrication of a metal plate capacitor in the metallisation levels above an integrated circuit consists of depositing an insulating layer (11) of between 0.5 and 1.5 microns on the surface of an integrated circuit (10). Method then involves grooving the insulating layer to form slabs (12), depositing and smoothing a metallic material (14) to form conducting lines (L1, L2, L3, L4) in the slabs, locally drawing the insulating layer to eliminate all the gaps separating two conducting lines, depositing a dielectric layer (16) and depositing and engraving a second metallic material (17) to at least completely fill the inter-line gaps.