| 摘要 |
<p>Vacancy diffusion during fabrication of semiconductor structure is reduced by providing semiconductor structure having first layer of semiconductor material on second layer of material, in which the semiconductor material includes elements that are capable of diffusing into the second or an adjacent layer by a vacancy diffusion mechanism; and injecting additional elements into the semiconductor material of the first layer in an amount to create interstitial defects to limit or prevent vacancy diffusion of the elements into the second layer. An independent claim is also included for a semiconductor structure comprising first layer of semiconductor material on a second layer of material, in which the semiconductor material includes elements that are capable of diffusing into the second or an adjacent layer by a vacancy diffusion mechanism; and additional elements injected into the semiconductor material of the first layer in an amount to create interstitial defects to limit or prevent vacancy diffusion of the elements into the second layer.</p> |
