| 摘要 |
<p>A chemically amplified resist composition is provided to form a resist pattern having improved resolution and line edge roughness by ArF excimer laser lithography, KrF excimer laser lithography and ArF immersion lithography. A chemically amplified resist composition comprises: (A) a salt represented by the formula 1 of A+-O3S-Q1; (B) a salt represented by the following formula 2; and (C) a resin containing a structural unit having an acid-labile group and non-soluble or hardly soluble in an aqueous alkali solution in nature but solubilized in an aqueous alkali solution by the action of an acid. In formula 1, Q1 is a C1-C8 perfluoroalkyl; A+ is at least one organic cation selected from the cations represented by the following formulae 1a, 1b and 1c. In formula 1a, each of p1-p3 is a substituted or non-substituted C1-C30 alkyl or C3-C30 cyclic hydrocarbyl group. In formula 1b, each of p4 and p5 is H, OH, C1-C12 alkyl or C1-C12 alkoxy. In formula 1c, each of p10-p21 is H, OH, C1-C12 alkyl or C1-C12 alkoxy; B is S or O; and m is 0 or 1. In formula 2, R22 is a substituted or non-substituted C1-C30 hydrocarbon in which at least one -CH2- is optionally substituted with -CO- or -O-; each of Q3 and A4 is F or C1-C6 perfluoroalkyl; and A+ is an organic cation represented by the following formula 2a. In formula 2a, each of P6 and P7 is C1-C12 alkyl or C2-C12 cycloalkyl, or P6 and P7 are bonded to each other to form a C3-C12 divalent bicyclic hydrocarbyl group together with the adjacent S+, wherein at least one -CH2- in the bicyclic group is optionally substituted with -CO-, -O-, or -S-; P8 is H; and P9 is a substituted or non-substituted C1-C12 alkyl, C3-C12 cycloalkyl or aromatic group, or P8 and P9 are bonded to each other to form a divalent bicyclic group by forming 2-oxocycloalkyl group together with the adjacent -CHCO-, wherein at least one -CH2- in the bicyclic group is optionally substituted with -CO-, -O-, or -S-.</p> |
