| 摘要 |
PROBLEM TO BE SOLVED: To manufacture and provide a highly reliable display device that has a thin-film transistor having a high numerical aperture and stable electrical characteristics.SOLUTION: In a method of manufacturing a semiconductor device that has a thin-film transistor using a semiconductor layer including a channel formation region as an oxide semiconductor film, heat treatment (heat treatment for dehydration or dehydrogenation) for enhancing the purity of the oxide semiconductor film and for reducing moisture and the like which are impurities is performed. In addition, a gate electrode layer, a source electrode layer, and a drain electrode layer are manufactured by using a light transmissive conductive film to improve a numerical aperture.SELECTED DRAWING: Figure 9 |
