发明名称 ETCHING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide an etching method of improving wetness between a substrate and an etching liquid without irregularity and carrying out an etching treatment to suppress the irregularity of an extent of etching, thus to carry out a precise etching treatment. Ž<P>SOLUTION: A mist of particles of liquid L kept in a state of globular shapes with smaller surface areas because of their surface tension is caused to stick to a substrate 10 without dots. This suppresses the formation of a portion where wetness is not improved, which secures uniform wetness between the substrate 10 and the etching liquid L, thus enables carrying out a precise etching treatment on the substrate 10. As a result, the thickness ta of the substrate 10 is reduced precisely. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010021320(A) 申请公布日期 2010.01.28
申请号 JP20080179870 申请日期 2008.07.10
申请人 EPSON TOYOCOM CORP 发明人 II TOSHIHIRO
分类号 H01L21/306 主分类号 H01L21/306
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