APPARATUS FOR FORMING A THIN LAYER AND METHOD OF FORMING A THIN LAYER ON A SUBSTRATE USNIG THE SAME

摘要

An apparatus and method of forming an epitaxial layer are provided. The apparatus includes a process chamber in which an epitaxial process is performed to form epitaxial layer on a substrate. A first supplier supplies source gases for the epitaxial layer into the process chamber. A second supplier supplies dopants into the process chamber. A detector detects a composition ratio of the epitaxial layer and a concentration of the dopants in the epitaxial layer during the epitaxial growth process. And a controller controls a mass flow of at least one of the source gases and a mass flow of the dopants in-line with the epitaxial growth process. Accordingly, the layer thickness of the epitaxial layer can be accurately controlled in real time in line with the epitaxial process.

主权项

1. An apparatus for performing an epitaxial process, comprising:
a process chamber in which an epitaxial layer is formed on a substrate using an epitaxial process; a first supplier that supplies source gases for the epitaxial layer into the process chamber during the epitaxial process; a second supplier that supplies dopants into the process chamber during the epitaxial process; a detector that detects a composition ratio of the epitaxial layer and a concentration of the dopants in the epitaxial layer during the epitaxial process; and a controller that controls a mass flow of the source gases, a mass flow of the dopants, or both, in-line with the epitaxial process.