GATE-ALL-AROUND FIN DEVICE

摘要

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

主权项

1. A method comprising:
forming a plurality of fin structures from a substrate; forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures; forming a source contact on an exposed portion of a first fin structure; forming drain contacts on exposed portions of adjacent fin structures to the first fin structure; and forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type, wherein:the source contact and the drain contacts are formed by an epitaxial growth process followed by an n+ implantation process;
the first conductivity type is formed as a deep N-well and the second conductivity type as a P-well; the gate structure is formed partially over the deep N-well and the P-well; the first conductivity type is formed as a continuous deep N-well and the second conductivity type as a P-well; and the gate structure and the first fin structure comprising the source contact are formed completely over the deep N-well, thereby forming a floating contact.