GRAPHENE BASED MAGNETORESISTANCE SENSORS

摘要

A graphene structure is provided. The graphene structure comprises a substrate layer and at least two graphene layers disposed on the substrate. The at least two graphene layers comprises a gate voltage tuned layer and an effective graphene layer and the effective graphene layer comprises one or more graphene layers. A magnetoresistance ratio of the graphene structure is determined by a difference in a charge mobility and/or a carrier density between the gate voltage tuned layer and the effective graphene layer. The charge mobility and/or the carrier density of the gate no voltage tuned layer is tunable by a gate voltage applied to the graphene structure. A magnetic field sensor comprising the graphene structure is also provided.