SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide: a thin film transistor in which contact resistance between a semiconductor layer including a region where a channel of the thin film transistor is formed, and both of a source electrode layer and drain electrode layer is small; a thin film transistor in which electrical resistance of wirings is small; and a thin film transistor having a structure in which a carrier can smoothly move in a semiconductor layer which covers at least a part of a level difference generated at end parts of a source electrode layer and a drain electrode layer.SOLUTION: In forming a thin film transistor, a first wiring layer is provided on a first electrode layer and a second wiring layer is provided on a second electrode layer; the first electrode layer extends from an end of the first wiring layer and the second electrode layer extends from an end of the second wiring layer; and a semiconductor layer is provided so as to be electrically connected to a lateral face and top face of the first electrode layer and a lateral face and top face of the second electrode layer.SELECTED DRAWING: Figure 1