RESISTANCE CHANGE ELEMENT AND FORMATION METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a resistance change element having reduced leak current in the OFF state and improved breakdown voltage at the time of reset.SOLUTION: A variable-resistance element includes: a first electrode 1; a second electrode 2; and a resistance change layer 3 provided between the first electrode and second electrode. The resistance change layer 3 is composed of: a buffer layer 4 in contact with the first electrode 1; and a solid electrolyte layer 5 in contact with the second electrode 2. The first electrode 1 has a structure including copper; and ionizes the copper when voltage is applied between the first electrode and second electrode, and injects the ionized copper into the buffer layer and solid electrolyte layer. The buffer layer 4 is made from oxide of valve metal having oxidation free energy negatively larger than that of copper; and has a structure in which a first metal oxide layer 6 and second metal oxide layer 7 are provided in this order from the side closer to the first electrode, where the second metal oxide layer 7 is a passive layer.SELECTED DRAWING: Figure 1