| 摘要 |
A light emitting diode and a method for manufacturing the same are provided to improve the crystal quality by forming an insulating layer pattern between an a-plane(11-20) sapphire substrate and a semiconductor layer. An a-plane(11-20) sapphire substrate(100) is prepared. An insulating layer is formed on the a-plane(11-20) sapphire substrate. The insulating layer is partially etched to form an insulating pattern(224) for exposing parts of the a-plane(11-20) sapphire substrate. A first conductive-type semiconductor layer, an active layer(240), and a second conductive-type semiconductor layer are formed on the a-plane(11-20) sapphire substrate on which the insulating pattern is formed. The insulating pattern is a SiO2 pattern. Alternatively, an intermediate layer including at least one of a buffer layer and an undoped layer is formed on the a-plane(11-20) sapphire substrate, and then the insulating layer is formed on the intermediate layer.
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