发明名称 |
Method of producing semiconductor device using resist underlayer film by photo-crosslinking curing |
摘要 |
There is provided a resist underlayer film forming composition used in a lithography process for producing semiconductor devices. A method of producing a semiconductor device comprising: forming a coating film by applying a resist underlayer film forming composition containing a polymer, a crosslinker and a photoacid generator on a semiconductor substrate; forming an underlayer film by irradiating light to the coating film; and forming a photoresist by applying a photoresist composition on the underlayer film and heating the resultant layer. The polymer polymer is a polymer having a benzene ring or a hetero ring in a main chain or a side chain bonded to the main chain, and the content rate of a benzene ring in the polymer is 30 to 70% by mass. The polymer may be a polymer containing a lactone structure.
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申请公布号 |
US2010022092(A1) |
申请公布日期 |
2010.01.28 |
申请号 |
US20070311745 |
申请日期 |
2007.10.10 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
HORIGUCHI YUSUKE;TAKEI SATOSHI;SHINJO TETSUYA |
分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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