| 摘要 |
SOLUTION: There is provided a half tone phase shift mask blank having a half tone phase shift film that is formed on a transparent substrate and has a phase shift amount of 150-200° with light having a wave length of 200 nm or less, includes at least one layer of a silicon-based material composed of silicon and nitrogen, or a silicon-based material composed of silicon, nitrogen, and oxygen, has a transmittance of 3-20% with light having a wave length of 200 nm or less, and has a film thickness of 62 mm or less.EFFECT: The half tone phase shift mask blanks is provided with a half tone phase shift film which is thinner and so favorable for processing a photomask pattern, gives a half tone phase shift mask blank low in risk of break of a fine pattern when producing a half tone phase shift mask by forming a pattern with the half tone phase shift film, and secures a phase difference necessary for a phase shift film and a transmittance necessary for a half tone mask.SELECTED DRAWING: Figure 1 |
