| 发明名称 |
Quantum well-modulated bipolar junction transistor |
| 摘要 |
A semiconductor device includes a quantum well-modulated bipolar junction transistor (QW-modulated BJT) having a base with an area for a modulatable quantum well in the base. The QW-modulated BJT includes a quantum well (QW) control node which is capable of modulating a quantity and level of energy levels of the quantum well. A recombination site abuts the area for the quantum well with a contact area of at least 25 square nanometers. The semiconductor device may be operated by providing a reference node such as ground to the emitter and a power source to the collector. A bias voltage is provided to the gate to form the quantum well and a signal voltage is provided to the gate, so that the collector current includes a component which varies with the signal. |
| 申请公布号 |
US9508707(B2) |
申请公布日期 |
2016.11.29 |
| 申请号 |
US201514630727 |
申请日期 |
2015.02.25 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Edwards Henry Litzmann |
| 分类号 |
H01L21/00;H01L27/00;H01L29/00;H01L27/06;H01L29/739;H01L21/8249;H03K17/66;H01L21/8228;H01L27/082;H01L29/66;H01L29/735;H01L29/10 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
Garner Jacqueline J.;Cimino Frank D. |
| 主权项 |
1. A semiconductor device, comprising:
a substrate comprising a semiconductor material; a quantum well-modulated bipolar junction transistor (QW-modulated BJT), comprising:
a base of a first conductivity type disposed in the semiconductor material;an emitter of a second, opposite, conductivity type abutting the base, disposed in the semiconductor material;a collector of the second conductivity type abutting the base, disposed in the semiconductor material;a quantum well control node disposed proximate to an area for a modulatable quantum well in the base, wherein the quantum well control node does not overlap the emitter or the collector; anda recombination site abutting the area for the modulatable quantum well a contact area of at least 25 square nanometers. |
| 地址 |
Dallas TX US |
