发明名称 Semiconductor packages and methods of packaging semiconductor devices
摘要 Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a wafer having first and second major surfaces. The wafer is prepared with a plurality of dies and a plurality of external electrical contacts disposed on the first major surface of the wafer. The method includes processing the wafer. Processing the wafer includes separating the wafer into a plurality of individual dies. An individual die includes first and second major surfaces and first and second sidewalls, and the external electrical contacts are formed on the first major surface of the die. An encapsulant material is formed. The encapsulant material covers at least a portion of the first and second sidewalls of the die.
申请公布号 US9508623(B2) 申请公布日期 2016.11.29
申请号 US201514731484 申请日期 2015.06.05
申请人 UTAC HEADQUARTERS PTE. LTD. 发明人 Suthiwongsunthorn Nathapong;Dimaano Antonio Jr. Bambalan;Huang Rui;Tan Hua Hong;Le Kriangsak Sae;Ho Beng Yeung;De Vera Nelson Agbisit;Robles Roel Adeva;Micla Wedanni Linsangan
分类号 H01L21/44;H01L23/31;H01L21/56;H01L21/78;H01L21/3105;H01L21/683;H01L23/00;H01L23/544 主分类号 H01L21/44
代理机构 Horizon IP Pte. Ltd. 代理人 Horizon IP Pte. Ltd.
主权项 1. A method for forming a semiconductor package comprising: providing a wafer having first and second major surfaces, wherein the wafer is prepared with a plurality of dies and a plurality of external electrical contacts disposed on the first major surface of the wafer; and processing the wafer, wherein processing the wafer comprises performing a first singulation process which comprises a full cut to separate the wafer into the plurality of individual dies, wherein an individual die comprises first and second major surfaces and first and second sidewalls, and the external electrical contacts are formed on the first major surface of the die, and wherein the individual dies are provided on a support unit and adjacent individual dies are separated by a gap on the support unit,expanding the support unit along radius of the support unit to increase the gap between adjacent individual dies prior to forming an encapsulant material, wherein the gap is increased to a predetermined distance which is sufficiently wide to accommodate at least an encapsulant material, and wherein the individual dies with increased gap distance are processed together in a wafer format on the support unit, andforming an encapsulant material, wherein the encapsulant material covers at least a portion of the first and second sidewalls of the die.
地址 Singapore SG