Semiconductor device and method for manufacturing the same

摘要

A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.

主权项

1. A semiconductor device comprising:
a semiconductor element; a first sealing layer covering the semiconductor element at least partly, the first sealing layer including a first fiber and a first organic resin layer; a conductive film electrically connected with the semiconductor element with the first sealing layer interposed between the conductive film and the semiconductor element; and a second sealing layer covering the semiconductor element, the second sealing layer including a second fiber and a second organic resin layer, wherein the semiconductor element is interposed between the first sealing layer and the second sealing layer, wherein the first sealing layer and the second sealing layer contact with each other at least at a first portion and a second portion, the semiconductor element being located between the first portion and the second portion.