发明名称 | Wafer treatment solution for edge-bead removal, edge film hump reduction and resist surface smooth, its apparatus and edge-bead removal method by using the same | ||
摘要 | The present disclosure provides a wafer treatment solution for edge-bead removal, edge film hump reduction and resist surface smooth. The wafer treatment solution includes a solution and a fluorine-containing additive mixed in the solution. The fluorine-containing additive has a following formula (I): Rf—X—(CH2CH2O)m—R1 (I); or a following formula (II):; An apparatus and a method by using the wafer treatment solution are also provided herein. | ||
申请公布号 | US9508558(B2) | 申请公布日期 | 2016.11.29 |
申请号 | US201514591044 | 申请日期 | 2015.01.07 |
申请人 | Ke I-Shan | 发明人 | Lin Yu-Hsun |
分类号 | C11D7/50;H01L21/306;H01L21/308;C11D11/00;H01L21/67 | 主分类号 | C11D7/50 |
代理机构 | McClure, Qualey & Rodack, LLP | 代理人 | McClure, Qualey & Rodack, LLP |
主权项 | 1. A wafer treatment solution, comprising: a solution; and a fluorine-containing additive dispersed in the solution, and having a compound of a formula (I): Rf—X—(CH2CH2O)m—R1 (I),wherein Rf is a C1-C6 fluorine-containing alkyl group, R1 is hydrogen, a C1-C3 alkyl group, a C1-C3 carboxylic group, or a C1-C3 amino group (—NH2), X is —O—, —NH—, —SO3NH— —COO—, —CH2O— or —CO—, and m is an integer of 1-6; ora compound of a formula (II):wherein Rf is a C1-C6 fluorine-containing alkyl group, R2 is —CH2—, R3 is a C1-C3 alkyl group, a C1-C3 alkoxyl group, a C1-C3 alkyloyl group, amino group (—NH2) or hydroxyl group (—OH), R4 is —CH2O— or —CH2—, Y is L is unsubstituted or —(CH2)n—, n is an integer of 1-3, o and q are individually an integer of 1-8, p is an integer of 1-3, and T is —OH, —OSO3−NH4+, —OSO3−Na+, —OSO3−K+, —NH2 or —COOH. | ||
地址 | New Taipei TW |