Method of manufacturing semiconductor device

摘要

To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

主权项

1. A method of manufacturing a semiconductor device, comprising:
(a) performing:
(a-1) supplying a source gas to a substrate in a process chamber;(a-2) exhausting an inside of the process chamber;(a-3) supplying a reaction gas to the substrate; and(a-4) exhausting the inside of the process chamber in order to form a first film on the substrate; and b) alternately repeating a first cycle and a second cycle to form a second film on the first film, wherein the first cycle comprises alternately repeating: (b-1) supplying the source gas to the substrate; and (b-2) exhausting the inside of the process chamber, and the second cycle comprises alternately repeating: (b-3) supplying the reaction gas to the substrate; and (b-4) exhausting the inside of the process chamber.