发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method of manufacturing a semiconductor device is disclosed. The method includes (a) loading a substrate into a process chamber; (b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber; (c) unloading the substrate from the process chamber; and (d) cleaning the buffer chamber and the process chamber after performing the step (c), wherein the step (d) comprises: (d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and (d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit. |
申请公布号 |
US9508546(B2) |
申请公布日期 |
2016.11.29 |
申请号 |
US201414566989 |
申请日期 |
2014.12.11 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
Toyoda Kazuyuki;Takasaki Tadashi;Ashihara Hiroshi;Sano Atsushi;Akae Naonori;Yanai Hidehiro |
分类号 |
C25F5/00;H01L21/02;H01J37/32;C23C16/44;C23C16/455 |
主分类号 |
C25F5/00 |
代理机构 |
Volpe and Koenig, P.C. |
代理人 |
Volpe and Koenig, P.C. |
主权项 |
1. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a process chamber; (b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber; (c) unloading the substrate from the process chamber; and (d) cleaning the buffer chamber and the process chamber after performing the step (c), wherein the step (d) comprises: (d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and (d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit. |
地址 |
Tokyo JP |