Semiconductor memory apparatus

摘要

A semiconductor memory apparatus includes a bank; a temperature sensor configured to generate a temperature voltage of which voltage level is changed according to a temperature variation of the bank; and a timing control block configured to control a timing of a signal to be inputted to the bank, according to the voltage level of the temperature voltage.

主权项

1. A semiconductor comprising:
a first circuit; a second circuit; a first temperature sensor configured to generate a first temperature voltage in response to a temperature of the first circuit; a second temperature sensor configured to generate a second temperature voltage in response to a temperature of the second circuit; a signal transfer block configured to output a signal to one of the first circuit and the second circuit in response to an circuit select signal; and a timing control block configured to control a timing of the signal in response to the first and second temperature information, wherein the timing control block determines whether to delay the signal, according to the voltage level of the first temperature voltage, and outputs the signal which is determined in terms of whether to be delayed or not, to the first circuit, and wherein the timing control block determines whether to delay the signal, according to the voltage level of the second temperature voltage, and outputs the signal which is determined in terms of whether to be delayed or not, to the second circuit.