METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To ease and simplify a manufacturing process for a semiconductor device having a silicide layer. SOLUTION: The method of manufacturing device includes (A) a step to form a polymetal gate electrode 3 on a substrate 1, (B) a step to accumulate an interlayer insulating film 7 on the entire surface of the substrate 1, (C) a step to simultaneously make first and second contact holes C3 and C2 to the polymetal gate electrode 3 and the surface of the substrate 1, respectively, (D) a step to form a first silicide 10 by changing the surface of an exposed first metal film 3b into a silicide on the bottom of the first contact hole C3, (E) a step to accumulate a second metal film 20 on the entire surface of the substrate 1, (F) a step to form a second silicide 22 through silicide reaction between the second metal film 20 and the surface of the substrate 1 on the bottom of the second contact hole C2, and (G) a step to remove the non-reacted second metal film 20. COPYRIGHT: (C)2007,JPO&INPIT