| 摘要 |
<p>A photomask of a semiconductor device and a pattern forming method using the same are provided to improve a shortening effect of a line end of an independent pattern and to enhance a process margin by forming a phase shift region at an end of an isolated pattern. A plurality of light shielding layers(202,204) having a shape of isolated line are arranged on an upper surface of a light transmitting substrate(200). A phase shift region(206) is arranged at an end of the light shielding layer in order to form a phase difference which causes destructive interference between the transmitting light and the light for penetrating the light transmitting substrate. The phase shift region is formed with a type of a groove which is formed by etching the light transmitting substrate as much as predetermined depth.</p> |
