| 摘要 |
<p>A method for correcting an optical proximity effect is provided to correct distortion due to the optical proximity effect by performing an OPC(Optical Proximity Correction) verification process. A test mask for target patterns is manufactured(201). The target patterns are transferred onto a wafer by using the test mask(202). CD data for the target patterns are measured(203). A model calibration and an OPC recipe are produced by using the CD data(204,205). A first OPC process is performed on an entire area of the mask by using a model and a recipe(206). A first verification process for a result of the first OPC process is performed(207). A second OPC process for erroneous patterns is performed selectively and a second verification process for a result of the second OPC process is performed(212,213). A mask is manufactured by using the verified result(209).</p> |
