| 摘要 |
<p>A method of fabricating a flash memory device is provided to prevent a top bridge phenomenon between drain contacts by forming the drain contact using self-aligned contact process. Plural gates(16) are formed on a semiconductor substrate(10), and then a stopper nitride layer(21) is formed on the substrate. An interlayer dielectric(22) is formed on the stopper nitride layer, and is planarized to expose the stopper nitride. A second interlayer dielectric(23) is formed on the entire surface of the substrate, and the substrate is subjected to etching to form drain contact holes on the second and first interlayer dielectrics. The stopper nitride layer is removed, and then the drain contact holes are buried to form drain contacts(26). A third interlayer dielectric(27) is formed on the entire surface. Drain contacts(25) and contact holes are formed on the third and second interlayer dielectrics.</p> |
