| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a mirror arrangement for semiconductor lithography, and to provide the mirror arrangement for the reflection of electromagnetic radiation. <P>SOLUTION: Two or more optical layers 5 aimed at forming a mirror region 4 are formed at a front face 3 of a board 2. Before the application of the optical layer 5, the front face 3 of the board 2 is processed at a first work step so that the front face 3 has the dimensional accuracy demanded. In a second work step, at least one electric conductive path 7 is applied on the front face 3 of the board 2 at an exterior of an optical active area A. In order to rectify the variation of dimensional accuracy, caused by application of the electric conductive path 7, the front face 3 of the board 2 is subjected to post-treatment, in at least a region near to the electric conductive path 7 in a third work step, and the optical layer 5 is applied in a fourth work step. <P>COPYRIGHT: (C)2008,JPO&INPIT |
