| 摘要 |
An GaN-based semiconductor light-emitting device and a method of manufacture thereof are provided to use the scatter inducing pattern formed in the top of the substrate and to easily remove the GaN-based semiconductor layer from the substrate. A plurality of scattering inducing patterns is formed on the substrate(301). A plurality of scattering inducing pattern is located with the regular interval. The GaN-based semiconductor layer(110) is grown up on the front of the resultant substrate. The GaN-based semiconductor layer is comprised of a plurality of layers. The scattering inducing patterns is removed and the scattering inducing groove(122) is formed within the GaN-based semiconductor layer. The substrate and GaN-based semiconductor layer is divided by an LLO(Laser Lift Off) method.
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