METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for selectively controlling Vth to a plurality of types of MOSFETs having a desired different Vth (threshold voltage). SOLUTION: The method of manufacturing the semiconductor device includes: a step of forming a first gate insulation film 45 including silicon dioxide and a second one 46 including a metal oxide in a region for forming the plurality of kinds MOSFETs Tr1-Trn on a semiconductor substrate 40; a step of forming a gate electrode 47 including polysilicon on the first and second insulation films 45, 46; and further a step of forming the gate electrode 47 before performing heat treatment so that temperature of at least one of MOSFETs Trn differs from that of other types of MOSFETs Tr1-Tr3 in the plurality of types of MOSFETs Tr1-Trn. COPYRIGHT: (C)2010,JPO&INPIT