| 发明名称 |
METHODS AND APPARATUS FOR EPITAXIAL FILM FORMATION |
| 摘要 |
<p>In a first aspect, a first system is provided for semiconductor device manufacturing. The first system includes (1) an epitaxial chamber adapted to form a material layer on a surface of a substrate; and (2) a plasma generator coupled to the epitaxial chamber and adapted to introduce plasma to the epitaxial chamber. Numerous other aspects are provided.</p> |
| 申请公布号 |
WO2007044530(A2) |
申请公布日期 |
2007.04.19 |
| 申请号 |
WO2006US39171 |
申请日期 |
2006.10.03 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MOFFATT, STEPHEN;SANTIAGO, JAMES |
| 分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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