| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor having excellent carrier control characteristics.SOLUTION: In a transistor 10, an electrode 12 of Pt is formed on a substrate 11 of silicon, or the like, a 75/25 mol% of VDF/TrFE (vinylidene fluoride-ethylene trifluoride copolymer) is applied thereon by spin coating, and then dried at 120°C thus forming a thin film of ferroelectric 13 of 150 nm thick. MoS(molybdenum disulfide) is sliced as a two-dimensional material 14, and transferred onto the ferroelectric 13 by using a tape. Thereafter, a drain electrode 15 and a source electrode 16, partially composed of Au, are formed by photolithography.SELECTED DRAWING: Figure 1 |
