发明名称 NEGATIVE HIGH VOLTAGE HOT SWITCHING CIRCUIT
摘要 A biasing circuit includes cascoded transistors including a first transistor and a second transistor. A first gate of the first transistor is coupled to a second gate of the second transistor at a first node. The circuit also includes a voltage control circuit coupled to at least one of the first transistor or the second transistor. The voltage control circuit is configured to change a voltage level of at least one of the first transistor or the second transistor to allow voltage domain transition of an output signal in view of a change in state of an input signal without ramping a supply signal of the biasing circuit.
申请公布号 US2016365849(A1) 申请公布日期 2016.12.15
申请号 US201514965678 申请日期 2015.12.10
申请人 Cypress Semiconductor Corporation 发明人 Moscaluk Gary Peter;Georgescu Bogdan I.;Williams Timothy
分类号 H03K17/0412;H03K19/0185;G11C16/30;G11C11/22;G11C17/08;G11C11/417 主分类号 H03K17/0412
代理机构 代理人
主权项 1. A circuit comprising: a plurality of cascoded transistors comprising a first transistor and a second transistor, wherein a first gate of the first transistor is coupled to a second gate of the second transistor at a first node; a voltage control circuit coupled to at least one of the plurality of cascoded transistors, wherein the voltage control circuit is configured to change a supply voltage level at a terminal of at least one of the plurality of cascoded transistors to allow voltage domain transition of an output signal configured to be coupled to an output of the voltage control circuit in view of a change in state of a first signal input to the circuit without ramping a supply signal of the circuit; and a bulk controller coupled to a second node, the bulk controller configured to output a bulk signal via the second node.
地址 San Jose CA US