SEMICONDUCTOR ELEMENT, RESIN COMPOSITION, AND SERGE COUNTERMEASURE MEMBER

摘要

PROBLEM TO BE SOLVED: To achieve a countermeasure which has a simple structure, a small parasitic capacitance and has a high operation speed, as a serve countermeasure for a semiconductor element.SOLUTION: A semiconductor element has a transistor region 11 and a serge countermeasure region 12. The transistor region 11 has a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, and a gate electrode 31, a source electrode 32 and a drain electrode 33 which are formed on the second semiconductor layer. The serge countermeasure region 12 has serge countermeasure sections 41 which are connected to the drain electrode 33 and the source electrode 32 respectively and are formed of an insulating material with a varistor function.SELECTED DRAWING: Figure 1