发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND FOUP FOR USE THEREIN
摘要 PROBLEM TO BE SOLVED: To suppress failure of semiconductor substrate due to out gas in a FOUP.SOLUTION: A FOUP 1 has a body 2 including an opening 2d for carrying in and out a semiconductor wafer 4, a lid 3 adhering to the body 2 so as to close the opening 2d, and provided detachably in the body 2, a suction hole 2f and an exhaust hole 2h formed in the body 2, a filter 2g provided in the suction hole 2f, and a filter 2i provided in the exhaust hole 2h. Furthermore, while housing the semiconductor wafer 4 in the internal space 2k of the body 2, outdoor air is taken from the suction hole 2f into the internal space 2k via a filter 2g, and the air in the internal space 2k is discharged from the exhaust hole 2h to the outside of the body 2 thus ventilating the air.SELECTED DRAWING: Figure 1
申请公布号 JP2016219620(A) 申请公布日期 2016.12.22
申请号 JP20150103580 申请日期 2015.05.21
申请人 RENESAS ELECTRONICS CORP 发明人 SAKAGUCHI JIRO;KOIWA AKIRA;KOBAYASHI KAICHIRO;SATO KENICHI;HAMADA NAOHIDE;TOMA NOBUAKI
分类号 H01L21/673;H01L21/02;H01L21/768 主分类号 H01L21/673
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