发明名称 |
COMPOSITIONS COMPRISING BLOCK COPOLYMER AND PROCESSES FOR PHOTOLITHOGRAPHY |
摘要 |
PROBLEM TO BE SOLVED: To provide new photoresist compositions that are useful for immersion lithography.SOLUTION: Preferred photoresist compositions of the invention comprise one or more block copolymers. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.SELECTED DRAWING: None |
申请公布号 |
JP2016218484(A) |
申请公布日期 |
2016.12.22 |
申请号 |
JP20160186995 |
申请日期 |
2016.09.26 |
申请人 |
ROHM & HAAS ELECTRONIC MATERIALS LLC |
发明人 |
WANG DEYAN;SZMANDA CHARLES R;BARCLAY GEORGE G;XU CHENG-BAI |
分类号 |
G03F7/039;C08F293/00;G03F7/20 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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