发明名称 COMPOSITIONS COMPRISING BLOCK COPOLYMER AND PROCESSES FOR PHOTOLITHOGRAPHY
摘要 PROBLEM TO BE SOLVED: To provide new photoresist compositions that are useful for immersion lithography.SOLUTION: Preferred photoresist compositions of the invention comprise one or more block copolymers. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.SELECTED DRAWING: None
申请公布号 JP2016218484(A) 申请公布日期 2016.12.22
申请号 JP20160186995 申请日期 2016.09.26
申请人 ROHM & HAAS ELECTRONIC MATERIALS LLC 发明人 WANG DEYAN;SZMANDA CHARLES R;BARCLAY GEORGE G;XU CHENG-BAI
分类号 G03F7/039;C08F293/00;G03F7/20 主分类号 G03F7/039
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