发明名称 |
METHOD OF MANUFACTURING EPITAXIAL WAFER AND SILICON-BASED SUBSTRATE FOR EPITAXIAL GROWTH |
摘要 |
A method of manufacturing an epitaxial wafer having an epitaxial layer on a silicon-based substrate, the method of manufacturing the epitaxial wafer including epitaxially growing a semiconductor layer on the silicon-based substrate after applying terrace processing to an outer peripheral portion of the silicon-based substrate. As a result, the method of manufacturing the epitaxial wafer having the epitaxial layer on the silicon-based substrate in which an epitaxial wafer which is completely free from cracks can be obtained, is provided. |
申请公布号 |
US2016365239(A1) |
申请公布日期 |
2016.12.15 |
申请号 |
US201515120924 |
申请日期 |
2015.02.10 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
HAGIMOTO Kazunori;SHINOMIYA Masaru;TSUCHIYA Keitaro;GOTO Hirokazu;SATO Ken;SHIKAUCHI Hiroshi;KOBAYASHI Shoichi;KURIMOTO Hirotaka |
分类号 |
H01L21/02;H01L29/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |