| 摘要 |
PROBLEM TO BE SOLVED: To suppress deterioration in element characteristics even in a case where an oxide semiconductor is formed after formation of a gate insulating layer, a source electrode layer, and a drain electrode layer.SOLUTION: A gate electrode layer is formed on a substrate. A gate insulating layer is formed on the gate electrode layer. A source electrode layer and a drain electrode layer are formed on the gate insulating layer. Surface processing is performed on surfaces of the gate insulating layer, the source electrode layer, and the drain electrode layer formed on the substrate. After the surface processing is performed, an oxide semiconductor layer is formed on the gate insulating layer, the source electrode layer, and the drain electrode layer.SELECTED DRAWING: Figure 1 |
