发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a signal processing circuit capable of suppressing consumption power without requiring a complicated manufacture step.SOLUTION: A storage element comprises: two logic elements (a first phase inversion element and a second phase inversion element) each inverts a phase of an input signal and outputs the input signal whose phase has been inverted; a first selection transistor; and a second selection transistor. The storage element has two sets (a set of a first transistor and a first capacitive element, and a set of a second transistor and a second capacitive element) each consists of a capacitive element and a transistor whose channel is formed on an oxide semiconductor layer. The storage element is used for a storage device included in a signal processing circuit. For example, the storage element is used for a storage device such as a register and a cache memory, included in the signal processing circuit.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016201554(A) |
申请公布日期 |
2016.12.01 |
申请号 |
JP20160127447 |
申请日期 |
2016.06.28 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN |
分类号 |
H01L21/8234;H01L21/336;H01L21/822;H01L21/8244;H01L27/04;H01L27/088;H01L27/105;H01L27/11;H01L29/786;H03K3/356 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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