发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a signal processing circuit capable of suppressing consumption power without requiring a complicated manufacture step.SOLUTION: A storage element comprises: two logic elements (a first phase inversion element and a second phase inversion element) each inverts a phase of an input signal and outputs the input signal whose phase has been inverted; a first selection transistor; and a second selection transistor. The storage element has two sets (a set of a first transistor and a first capacitive element, and a set of a second transistor and a second capacitive element) each consists of a capacitive element and a transistor whose channel is formed on an oxide semiconductor layer. The storage element is used for a storage device included in a signal processing circuit. For example, the storage element is used for a storage device such as a register and a cache memory, included in the signal processing circuit.SELECTED DRAWING: Figure 1
申请公布号 JP2016201554(A) 申请公布日期 2016.12.01
申请号 JP20160127447 申请日期 2016.06.28
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;KOYAMA JUN
分类号 H01L21/8234;H01L21/336;H01L21/822;H01L21/8244;H01L27/04;H01L27/088;H01L27/105;H01L27/11;H01L29/786;H03K3/356 主分类号 H01L21/8234
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