DRIVE CONTROL DEVICE

摘要

A drive control device for two semiconductor elements having a transistor structure and a diode structure with a common energization electrode includes: a current detection device outputting a current detection signal of the semiconductor elements; and a first control device outputting a gate drive signal from when a first time period has elapsed from a starting time to when a second time period has elapsed from the starting time, at which an off-command signal is input after it is determined that a current flows through the semiconductor elements in a forward direction of the diode structure during a time period for which an on-command signal is input to the semiconductor elements. The first and the second time periods are preliminary set not to generate an arm short-circuit between two semiconductor elements.

主权项

1. A drive control device for two semiconductor elements, each semiconductor element having an insulated gate type transistor structure, to which a gate drive voltage is applied, and a diode structure arranged on a same semiconductor substrate, the transistor structure and the diode structure having a common energization electrode, the drive control device comprising:
a current detection device that outputs a current detection signal corresponding to a current flowing through at least one of the two semiconductor elements; and a first control device that outputs a gate drive signal for instructing to apply the gate drive voltage from when a first time period has elapsed from a starting time to when a second time period has elapsed from the starting time, at which an off-command signal is input after it is determined based on the current detection signal that a current flows through the at least one of the two semiconductor elements in a forward direction of the diode structure during a time period for which an on-command signal is input to the at least one of the two semiconductor elements, wherein: the two semiconductor elements provide a half-bridge circuit; and the first time period and the second time period are preliminary set not to generate an arm short-circuit between the two semiconductor elements.