发明名称 |
RADIO FREQUENCY SIGNAL POWER AMPLIFICATION CIRCUIT |
摘要 |
An RF amplifier includes a branch with an inductor series-connected with a capacitor between first and second power supply nodes, a junction point between the inductor and capacitor forming an output node. A further branch includes a MOS transistor series-connected with a switch between the output node and the second power supply node. The switch has a control node coupled to receive a first input signal. The MOS transistor has a gate coupled to receive a second input signal. A control circuit applies the power supply voltage as the second input signal when a frequency/phase-modulated signal is applied as the first input signal. The control circuit further applies a variable signal as the second input signal when a radio frequency signal of constant frequency, phase, and amplitude is applied as the first input signal, and in this mode the MOS transistor is constrained to operate as a current source. |
申请公布号 |
US2016308493(A1) |
申请公布日期 |
2016.10.20 |
申请号 |
US201514956826 |
申请日期 |
2015.12.02 |
申请人 |
STMicroelectronics (Grenoble 2) SAS |
发明人 |
Ayraud Michel |
分类号 |
H03F1/02;H03F3/21;H03F3/193;H03F3/217 |
主分类号 |
H03F1/02 |
代理机构 |
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代理人 |
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主权项 |
1. A radio frequency signal power amplifier, comprising:
a first branch comprising an inductor series-connected with a first capacitor between a first node and a second node of application of a direct current (DC) power supply voltage, wherein a junction point of the inductor and the first capacitor forms an output node of the amplifier that is configured to be coupled to a load; a second branch comprising a first MOS transistor series-connected with a first switch between the output node the second node, the first switch having a control node coupled to a first input node configured to receive a first input signal, the first MOS transistor having a gate coupled to a second input node configured to receive a second input signal; and a circuit configured to generate a binary signal indicative of a sign of a difference between a drain-source voltage of the first transistor and a gate-source voltage minus a threshold voltage of the first transistor. |
地址 |
Grenoble FR |