| 发明名称 |
PATTERNED SUBSTRATE FOR GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND THE LIGHT EMITTING DIODE USING THE SAME |
| 摘要 |
The present invention provides a patterned substrate for gallium nitride-based light emitting diode, comprising: a patterned substrate having patterns, wherein the plurality of patterns are circle type having diameters (d) and the distances between the centers of the patterns are pitches (p), and the cross sections of the patterns are extruded shapes and have heights (h), and wherein the value of [diameter (d)/pitch (p)] is larger than (2.6)/3, and equal or smaller than 3/3. |
| 申请公布号 |
US2016315222(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201514923935 |
申请日期 |
2015.10.27 |
| 申请人 |
Research Cooperation Foundation of Yeungnam University |
发明人 |
Park Si Hyun;Cui Hao |
| 分类号 |
H01L33/22;H01L33/06;H01L33/32 |
主分类号 |
H01L33/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A patterned substrate for gallium nitride-based light emitting diode, comprising:
a patterned substrate having patterns, wherein the plurality of patterns are circle type having diameters (d) and the distances between the centers of the patterns are pitches (p), and the cross sections of the patterns are extruded shapes and have heights (h), and wherein the value of [diameter (d)/pitch (p)] is larger than (2.6)/3, and equal or smaller than 3/3. |
| 地址 |
Gyeongsangbuk-do KR |
