| 发明名称 |
METHOD AND STRUCTURE FOR MULTIGATE FINFET DEVICE EPI-EXTENSION JUNCTION CONTROL BY HYDROGEN TREATMENT |
| 摘要 |
Embodiments are directed to forming a structure comprising at least one fin, a gate, and a spacer, applying an annealing process to the structure to create a gap between the at least one fin and the spacer, and growing an epitaxial semiconductor layer in the gap between the spacer and the at least one fin. |
| 申请公布号 |
US2016315183(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201615198801 |
申请日期 |
2016.06.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Basker Veeraraghavan S.;Liu Zuoguang;Yamashita Tenko;Yeh Chun-chen |
| 分类号 |
H01L29/78;H01L29/66;H01L21/02 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a fin; a gate formed on the fin; a spacer formed on the gate and the fin; and an epitaxial layer formed in a gap between the fin and the spacer as a result of an application of an annealing process to the device. |
| 地址 |
Armonk NY US |
