| 发明名称 |
METHOD FOR FABRICATING THREE DIMENSIONAL DEVICE |
| 摘要 |
A method for forming a three dimensional device. The method may include directing ions to an end surface of an extension region of a fin structure, the fin structure extending perpendicularly from a substrate plane and having a fin axis parallel to the substrate plane, wherein the ions have trajectories extending in a plane perpendicular to the substrate plane and parallel to the fin axis, wherein a portion of the fin structure is covered by a gate structure defining a channel region, and wherein the end surface is not covered by the gate structure. |
| 申请公布号 |
US2016315176(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201514744881 |
申请日期 |
2015.06.19 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Sun Shiyu;Yoshida Naomi;Colombeau Benjamin;Gossmann Hans-Joachim L. |
| 分类号 |
H01L29/66;H01L21/8234;H01L21/265;H01L29/10;H01L29/423 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a three dimensional device, comprising:
directing ions to an end surface of an extension region of a plurality of fin structures, the plurality of fin structures extending perpendicularly from a substrate plane and having a fin axis parallel to the substrate plane, wherein the ions have trajectories extending in a plane perpendicular to the substrate plane and parallel to the fin axis, wherein a portion of the plurality of fin structures is covered by a gate structure defining a channel region, and wherein the end surface of at least two adjacent fin structures of the plurality of fin structures is not covered by the gate structure, and does not extend beyond the gate structure. |
| 地址 |
Gloucester MA US |
