| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME |
| 摘要 |
A semiconductor device and a method of forming the same, the semiconductor device includes a first transistor and a second transistor. The first transistor is disposed on a substrate and comprises a gate electrode, a gate dielectric layer and a first source/drain. The second transistor includes the gate electrode and a channel layer disposed on the gate electrode. |
| 申请公布号 |
US2016315100(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201514714352 |
申请日期 |
2015.05.18 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Yang Chin-Sheng |
| 分类号 |
H01L27/12;H01L29/24;H01L21/84 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first transistor disposed on a substrate, the first transistor comprising a gate electrode, a gate dielectric layer and a first source/drain; and a second transistor, comprising the gate electrode and a channel layer disposed on the gate electrode. |
| 地址 |
Hsin-Chu City TW |
