Multi-Gate High Voltage Device

摘要

A high voltage semiconductor device, particularly a device including a number of high breakdown voltage transistors having a common drain, first well, and insulating structure between the gate and the drain as well as method for using the same is provided in this disclosure. The high breakdown voltage transistors in the device together are in an elliptical shape. A second well region, gate structure, and a source region are partially overlapping discontinuous elliptical rings having at least two discontinuities or openings in a top view. The respective discontinuities or openings define each of the high breakdown voltage transistors.

主权项

1. A high voltage semiconductor device, comprising:
a plurality of high breakdown voltage transistors having a common drain region, a first doped well, and a first insulating structure, wherein each of the plurality of high breakdown voltage transistors extends along a common angular periphery in a top view and the plurality of high breakdown voltage transistors together has a circular shape.