MEASURING ARRANGEMENT FOR MEASURING OPTICAL PROPERTIES OF A REFLECTIVE OPTICAL ELEMENT, IN PARTICULAR FOR MICROLITHOGRAPHY

摘要

A measuring arrangement for measuring optical properties of a reflective optical element, in particular for microlithography, with an EUV light source (5), a detector (20) configured to detect EUV radiation reflected at the reflective optical element (10), and an imaging system (30, 40, 50, 60, 70, 80, 90), which images object points on the reflective optical element onto respective image points on the detector, wherein the imaging system is configured to reflect the EUV radiation, a first optical component (31, 41, 51, 61, 71, 81, 91), and at least one second optical component (32, 42, 52, 62, 72, 82, 92). Both at the first optical component and at the second optical component, reflection angles with respect to respective surface normals that respectively occur during reflection of the EUV radiation are at least 70°.

主权项

1. A measuring arrangement for measuring optical properties of a reflective optical element, comprising:
an extreme ultraviolet (EUV) light source; a detector configured to detect EUV radiation reflected at the reflective optical element; and an imaging system, which images object points on the reflective optical element onto respective image points on the detector; wherein the imaging system is configured to reflect the EUV radiation and comprises a first optical component and at least one second optical component; and wherein, both at the first optical component and at the second optical component, reflection angles with respect to respective surface normals that respectively occur during reflection of the EUV radiation are at least 70°.