A method of forming a multi-layered selector of a memory cell is described. In the method, a memory element of the memory cell is formed. The memory element stores information. A multi-layered selector of the memory cell is formed by alternating deposition of at least a dielectric layer and a first diffusion layer. The first diffusion layer includes fast diffusive ions. The multi- layered selector is coupled to the memory element in a memory cell.
申请公布号
WO2016122496(A1)
申请公布日期
2016.08.04
申请号
WO2015US13327
申请日期
2015.01.28
申请人
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
发明人
YANG, JIANHUA;GE, NING;LI, ZHIYONG;HENZE, RICHARD H.