发明名称 MEMORY CELL WITH A MULTI-LAYERED SELECTOR
摘要 A method of forming a multi-layered selector of a memory cell is described. In the method, a memory element of the memory cell is formed. The memory element stores information. A multi-layered selector of the memory cell is formed by alternating deposition of at least a dielectric layer and a first diffusion layer. The first diffusion layer includes fast diffusive ions. The multi- layered selector is coupled to the memory element in a memory cell.
申请公布号 WO2016122496(A1) 申请公布日期 2016.08.04
申请号 WO2015US13327 申请日期 2015.01.28
申请人 HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP 发明人 YANG, JIANHUA;GE, NING;LI, ZHIYONG;HENZE, RICHARD H.
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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