METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of simultaneously forming an enhanced FET and a depressed FET. SOLUTION: The method for manufacturing the semiconductor device comprises a step of forming a first impurity region of an impurity concentration to become a channel region of the first FET by first ion implanting on the surface of a semiconductor substrate; a step of forming a source region, a drain region of the first FET by second ion implanting for raising the impurity concentration of the first impurity region in the first impurity region except a region to be formed with the channel of at least the first FET of the first impurity region, and a second impurity region of an impurity concentration to become a channel region of the second FET; a step of forming a gate electrode on the channel regions of the first and second FETS; and a step of forming a source electrode and a drain electrode connected directly to the second impurity region or via an ohmic junction region.