| 摘要 |
PROBLEM TO BE SOLVED: To provide an aqueous dispersion for chemical mechanical polishing useful for manufacturing a semiconductor device especially capable of efficiently polishing a barrier metal layer and obtaining a sufficiently planarized finishing surface with high precision when polishing a processed film and barrier metal layer provided on a semiconductor substrate. SOLUTION: When polishing a copper film, tantalum layer and/or tantalum nitride layer, and insulation film under the same condition, an aqueous dispersion for chemical mechanical polishing is obtained, in which the ratio (R<SB>Cu</SB>/R<SB>Ta</SB>) of a polish rate (R<SB>Cu</SB>) of the copper film and that (R<SB>Ta</SB>) of the tantalum layer and/or tantalum nitride layer is 1/20 or less and the ratio (R<SB>Cu</SB>/R<SB>In</SB>) of the polish rate (R<SB>Cu</SB>) of the copper film and that (R<SB>In</SB>) of the insulation layer is 5 to 1/5. Preferably, R<SB>Cu</SB>/R<SB>In</SB>is 1/30 or less, especially 1/40 or less, and further 1/50 or less, and R<SB>Cu</SB>/R<SB>In</SB>is 4 to 1/4, especially 3 to 1/3, and further 2 to 1/2. COPYRIGHT: (C)2008,JPO&INPIT |
