| 摘要 |
<p>A method for fabricating a polysilicon TFT(thin film transistor) substrate for a flat panel display is provided to decrease the number of masks by including a mask process using a negative photoresist pattern of a reverse type. A gate metal layer is formed on a gate insulation layer(140) covering an active pattern(134) formed on a buffer layer(120) of an insulated substrate(110). A negative photoresist pattern(214) of a reverse type is formed on the gate metal layer, covering a channel region(134C) and an LDD(lightly doped drain) region(134L) of the active pattern. The gate metal layer is etched to form a gate electrode(152b). N+ impurities are doped into a source region(134S) and a drain region(134D) of the active pattern. The negative photoresist pattern is eliminated.</p> |
