发明名称 SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM
摘要 A semiconductor storage device has a memory string including a memory cell, a bit line electrically connected to one end of the memory string, and a sense amplifier electrically connected to the bit line. The sense amplifier has a first transistor, one end of which is connected to a first node on an electric current path of the bit line, and another end of which is electrically connected to a second node, a second transistor electrically connected between the second node and a sense node, and a third transistor, a gate of which is connected to the first node, and the third transistor being electrically connected between the second node and a third node whose voltage can be adjusted.
申请公布号 US2016189777(A1) 申请公布日期 2016.06.30
申请号 US201615062683 申请日期 2016.03.07
申请人 Kabushiki Kaisha Toshiba 发明人 YOSHIHARA Masahiro;ABIKO Naofumi
分类号 G11C16/04;G11C16/08;G11C16/26 主分类号 G11C16/04
代理机构 代理人
主权项 1. A semiconductor storage device comprising: a memory string including a memory cell; a bit line electrically connected to one end of the memory string; and a sense amplifier electrically connected to the bit line, wherein the sense amplifier comprises: a first transistor, one end of which is connected to a first node on an electric current path of the bit line, and another end of which is electrically connected to a second node; a second transistor electrically connected between the second node and a sense node; and a third transistor, a gate of which is connected to the first node, and the third transistor being electrically connected between the second node and a third node whose voltage can be adjusted.
地址 Minato-ku JP