发明名称 |
SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM |
摘要 |
A semiconductor storage device has a memory string including a memory cell, a bit line electrically connected to one end of the memory string, and a sense amplifier electrically connected to the bit line. The sense amplifier has a first transistor, one end of which is connected to a first node on an electric current path of the bit line, and another end of which is electrically connected to a second node, a second transistor electrically connected between the second node and a sense node, and a third transistor, a gate of which is connected to the first node, and the third transistor being electrically connected between the second node and a third node whose voltage can be adjusted. |
申请公布号 |
US2016189777(A1) |
申请公布日期 |
2016.06.30 |
申请号 |
US201615062683 |
申请日期 |
2016.03.07 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
YOSHIHARA Masahiro;ABIKO Naofumi |
分类号 |
G11C16/04;G11C16/08;G11C16/26 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor storage device comprising:
a memory string including a memory cell; a bit line electrically connected to one end of the memory string; and a sense amplifier electrically connected to the bit line, wherein the sense amplifier comprises: a first transistor, one end of which is connected to a first node on an electric current path of the bit line, and another end of which is electrically connected to a second node; a second transistor electrically connected between the second node and a sense node; and a third transistor, a gate of which is connected to the first node, and the third transistor being electrically connected between the second node and a third node whose voltage can be adjusted. |
地址 |
Minato-ku JP |